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Veuillez utiliser cette adresse pour citer ce document : https://hdl.handle.net/20.500.12177/11164
Titre: Dynamics of optical injection Semiconductor lasers: effects of Langevinian noise sources and integrated Resonant tunneling diode devices
Auteur(s): Essebe Eba, David
Directeur(s): Essimbi Zobo, Bernard
Mots-clés: Semiconductor laser
Optical injection
Effective gain coefficient
Optoelectronic oscillators
Résonant tunneling diode
Mixed mode oscillations
Multistability
Chaos
Date de publication: 21-déc-2021
Editeur: Université de Yaoundé I
Résumé: The nonlinear dynamic research in laser physics, especially in semiconductor lasers (SCLs) is still growing rapidly since the emergence of first laser diodes (LD). These SCLs are of paramount importance in optical data processing and optical communications. This Thesis studies the nonlinear dynamics of optical injection semiconductor lasers (OISCLs) by focusing on noise effects, its control and suppression using modified SCLs rate equations. Lasers exhibit spontaneous emission phenomenon, which is stochastic and, then a noise induced-effect. We treated noise influence in laser by adding the Langevin noises in laser rate equations. As results, we showed the method of avoiding and eliminating the 1/f noise, which requires a master laser (ML) with lower phase fluctuations. We optimized the relative intensity noise (RIN) in the low-frequency region (up to relaxation frequency around 1GHz) and reduced the level of intensity noise and the frequency noise (FN) when the OISCL is controlled by a new control parameter socalled effective gain coefficient (EGC) among many other parameters. We also developed a modified formula of laser full-width-half-maximum (FWHM) leading to an ideal laser linewidth modulated by the EGC in addition to the Henry factor. Next, we integrated it in an electrical oscillator based on resonant tunneling diode (RTD) in order to study the induced-nonlinear dynamics. We showed that either stabilities or instabilities of SCLs are enhanced by optoelectronic integration with an RTD. The EGC allows the restriction of locked optical phase leading to the stability control. The DC voltage, the parameter 𝑟(the resistance of the DC biasing circuit) and the EGC were control parameters in the central of these works: We observed that stable points are achieved, when the RTD is biased in the NDR either by smoothly increasing the DC voltage or by increasing 𝑟 while the EGC is decreasing. Nevertheless, the system has widely generated unstable oscillations. Various rich forms of dynamical behaviors have been observed including generation of chaos, hyperchaos and multistability with coexistence of N-scrolls and M-scrolls attractors due to cooperative dynamics between electrical excitation and optical injection in SCL. We achieved the route to chaos via cascade period doubling sequences termed Feigenbaum scenario in addition to the reversal period doubling cascade named antimonotonicity and, the OISCL exhibited furthermore strange attractors such as chaotic multiscroll attractors and an infinite scroll attractor. We used the parameter and DC voltage to control multistability and chaos. Lastly, in optical domain, the system has revealed bursting oscillations (BOs), mixed mode oscillations (MMOs), square-wave BOs modulated by the EGC, and mixed mode incrementing bifurcation (MMOIBs) relevant in the description of brain neuron activity.
Pagination / Nombre de pages: 185
URI/URL: https://hdl.handle.net/20.500.12177/11164
Collection(s) :Thèses soutenues

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